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IXTP8N65X2M

IXYS
Part Number IXTP8N65X2M
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 6...
Datasheet PDF File IXTP8N65X2M PDF File

IXTP8N65X2M
IXTP8N65X2M

Overview
Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 4A 16 A 4A 250 mJ 50 V/ns 32 W -55 .
.
.
+150 150 -55 .
.
.
+150 C C C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 2.
5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 4A, Note 1 Characteristic Values Min.
Typ.
Max.
650 V 3.
0 5.
0 V 100 nA 10 A 150 A 550 m OVERMOLDED GDS G = Gate S = Source D = Drain Features  International Standard Package  Plastic Overmolded Tab  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100668(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 4A, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.
8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 4A RG = 30 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.
5 • VDSS, ID = 4A RthJC RthCS Characteristic Values Min.
Typ.
Max 4.
8 8.
0 S 6 800 pF 49...


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