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IXTP8N65X2M

INCHANGE
Part Number IXTP8N65X2M
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@V...
Datasheet PDF File IXTP8N65X2M PDF File

IXTP8N65X2M
IXTP8N65X2M

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 32 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~125 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 3.
9 UNIT ℃/W IXTP8N65X2M isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTP8N65X2M ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Sou...


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