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CEP1012

Chino-Excel Technology
Part Number CEP1012
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Transistor
Published Mar 23, 2005
Detailed Description CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Supe...
Datasheet PDF File CEP1012 PDF File

CEP1012
CEP1012


Overview
CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 120 ±20 15 40 100 0.
8 Operating and Store Temperature Range TJ,Tstg -65 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
25 62.
5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice .
1 Rev 3.
2007.
May http://www.
cetsemi.
com CEP1012/CEB1012 Electrical Characteristics T...


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