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CEP10N6

CET
Part Number CEP10N6
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N6 CEB10N6 CEF10N6 VDSS...
Datasheet PDF File CEP10N6 PDF File

CEP10N6
CEP10N6

Overview
CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.
75Ω 0.
75Ω 0.
75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 10 6 40 166 1.
3 10d 6d 40 d 50 0.
4 Single Pulsed Avalanche Energy h EAS 187.
5 Single Pulsed Avalanche Current h IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
75 62.
5 2.
5 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2011.
Feb http://www.
cet-mos.
com CEP10N6/CEB10N6 CEF10N6 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, Tc = 125 C Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b IGSSF IGSSR VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off...


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