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MMBT5551LT1

WEJ
Part Number MMBT5551LT1
Manufacturer WEJ
Description TRANSISTOR
Published Aug 25, 2016
Detailed Description RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTD...
Datasheet PDF File MMBT5551LT1 PDF File

MMBT5551LT1
MMBT5551LT1

Overview
RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .
,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1.
2.
4 1.
3 3 2 1.
BASE 2.
EMITTER 3.
COLLECTOR 2.
9 1.
9 0.
95 0.
95 0.
4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage Collector-Emitter Voltage NEmitter-Base Voltage Collector Current OCollector Dissipation Ta=25oC* Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 180 160 6 600 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW O C OC TElectrical Characteristics (Ta=25 oC) Parameter Symbol MIN.
TYP.
MAX.
Unit Condition CCollector-Base Breakdown Voltage Collector-E...


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