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CFY25

Siemens Semiconductor Group
Part Number CFY25
Manufacturer Siemens Semiconductor Group
Description GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
Published Mar 23, 2005
Detailed Description GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metalli...
Datasheet PDF File CFY25 PDF File

CFY25
CFY25

Overview
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation, TS ≤ 56 ˚C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Symbol VDS VDG VGS ID Ptot Tch Tstg Values 5 7 –5…+0 80 250 150 – 65 … + 150 mA mW ˚C Unit V 1) 2) For detailed information see chapter Package Outlines.
TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group 1 07.
94 CFY 25 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Drain-source saturation current VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min.
IDSS Vp IG gm F – – – Ga 9 8.
5 8.
5 9.
5 9 9 – – – 1.
6 1.
9 2.
2 1.
7 2.
0 2.
3 15 – 0.
3 – 30 Values typ.
30 – 1.
0 0.
1 40 max.
60 – 3.
0 2 – mA V µA Unit mS dB Semiconductor Group 2 CFY 25 Total power dissipation Ptot = f (TS; TA*) * Package mounted on alumina Output characteristics ID = f (VDS) Transfer characteristics ID = f (VG) VDS = 3 V Semiconductor Group 3 CFY 25 Common Source Noise Parameters f GHz Fmin dB Ga dB Γopt MAG ANG RN Ω rN – N – F50 Ω dB G(F50 Ω) dB ID = 15 mA, VDS = 3.
0 V, Z0 = 50 Ω 2 4 6 8 10 12 14 0.
60 0.
77 1.
00 1.
25 1.
55 1.
77 2.
15 18.
5 14.
6 12.
4 11.
0 9.
8 9.
0 8.
1 0.
70 0.
59 0.
50 0.
47 0.
45 0.
43 0.
41 31 63 103 140 174 – 156 – 130 29 21 13 7.
3 5.
6 7.
1 18 0.
58...


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