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CFY30

Siemens Semiconductor Group
Part Number CFY30
Manufacturer Siemens Semiconductor Group
Description GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
Published Mar 23, 2005
Detailed Description GaAs FET CFY 30 ______________________________________________________________________________________________________...
Datasheet PDF File CFY30 PDF File

CFY30
CFY30


Overview
GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.
4 dB @ 4 GHz ) * High gain ( 11.
5 dB typ.
@ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY 30 A2 Q62703-F97 S D S G SOT-143 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature rang...



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