DatasheetsPDF.com

90N03

Tuofeng Semiconductor
Part Number 90N03
Manufacturer Tuofeng Semiconductor
Description Power-Transistor
Published Aug 29, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotiv...
Datasheet PDF File 90N03 PDF File

90N03
90N03

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 90N03 30 V 6.
0 mΩ 80 A TO-251 3 2 1 Type 90N03L Package TO-251 Marking 90N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Avalanche current, single pulse I AS T C=25 °C Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value Unit 80 320 240 80 ±20 95 -55 .
.
.
+175 55/175/56 A mJ A V w °C 1 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 90N03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 1.
1 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=250uA 1.
0 1.
5 Zero gate voltage drain current I DSS V DS=24 V, V GS=0 V, T j=25 °C 50 nA Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=±20V V DS=0 V V GS=4.
5 V, ID=20 A V GS=10 V, I D=40 A ± 100 nA 10.
0 mΩ 6.
0 2 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)