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MTED6N25H8

Cystech Electonics
Part Number MTED6N25H8
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10 N-Channel Enhance...
Datasheet PDF File MTED6N25H8 PDF File

MTED6N25H8
MTED6N25H8

Overview
CYStech Electronics Corp.
Spec.
No.
: C894H8 Issued Date : 2016.
07.
26 Revised Date : Page No.
: 1/10 N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=5A 250V 4.
6A 1.
2A 426mΩ Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTED6N25H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTED6N25H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTED6N25H8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C894H8 Issued Date : 2016.
07.
26 Revised Date : Page No.
: 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V (Note 1) Continuous Drain Current @ TC=100°C, VGS=10V (Note 1) Continuous Drain Current @ TA=25°C, VGS=10V (Note 2) Continuous Drain Current @ TA=70°C, VGS=10V (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=10mH, ID=4.
6A, VDD=50V (Note 5) Repetitive Avalanche Energy @ L=0.
05mH (Note 3) TC=25℃ (Note 1) Total Power Dissipation TC=100℃ TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Limits 250 ±30 4.
6 3.
3 1.
2 *3 1.
0 *3 18.
4 *1 9 106 3 *2 30 15 1.
9 1.
2 -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Thermal Resistance, Junction-to-ambient, max (Note 4) Symbol RθJC RθJA Value...


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