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MTED6N25J3

Cystech Electonics
Part Number MTED6N25J3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C894J3 Issued Date : 2013.03.11 Revised Date : 2013.12.30 Page No. : 1/9 N-Chann...
Datasheet PDF File MTED6N25J3 PDF File

MTED6N25J3
MTED6N25J3

Overview
CYStech Electronics Corp.
Spec.
No.
: C894J3 Issued Date : 2013.
03.
11 Revised Date : 2013.
12.
30 Page No.
: 1/9 N-Channel Enhancement Mode Power MOSFET MTED6N25J3 BVDSS ID RDSON(TYP) VGS=10V, ID=5A VGS=6V, ID=3A 250V 8A 435mΩ 410mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTED6N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTED6N25J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTED6N25J3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (Note 1) Continuous Drain Current @ VGS=10V, TC=100°C (Note 1) Continuous Drain Current @ VGS=10V, TA=25°C (Note 2) Continuous Drain Current @ VGS=10V, TA=70°C (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=50mH, ID=2A, VDD=50V (Note 2) Repetitive Avalanche Energy@ L=0.
1mH (Note 3) Total Power Dissipation @TC=25℃ (Note 1) Total Power Dissipation @TC=100℃ (Note 1) Total Power Dissipation @TA=25℃ (Note 2) Total Power Dissipation @TA=70℃ (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD PDSM Tj, Tstg Spec.
No.
: C894J3 Issued Date : 2013.
03.
11 Revised Date : 2013.
12.
30 Page No.
: 2/9 Limits 250 ±30 8 5 1.
5 1.
2 16 2 100 2 78 21 2.
5 1.
6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.
6 °C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 °C/W Thermal Resistance, Junction-to-amb...


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