DatasheetsPDF.com

MMBFJ109

Fairchild Semiconductor
Part Number MMBFJ109
Manufacturer Fairchild Semiconductor
Description N-Channel Switch
Published Aug 30, 2016
Detailed Description J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching appli...
Datasheet PDF File MMBFJ109 PDF File

MMBFJ109
MMBFJ109

Overview
J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory.
• Sourced from Process 58.
3 1 TO-92 1.
Drain 2.
Source 3.
Gate 2 1 SuperSOT-3 1.
Drain 2.
Source 3.
Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value 25 -25 10 -55 ~ +150 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108 109 110 rDS(on) Drain-Source On Resistance VDS ≤ 0.
1V, VGS = 0 108 109 110 Small Signal Characteristics Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance Cdg(on) Drain-Gate Off Capacitance Csg(off) Source-Gate Off Capacitance * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.
0% VDS = 0, VGS = 0, f = 1.
0MHz VDS = 0, VGS = -10, f = 1.
0MHz VDS = 0, VGS = -10, f = 1.
0MHz Min.
Typ.
Max.
Units -25 V -3.
0 -200 nA nA -3.
0 -10 V -2.
0 -6.
0 V -0.
5 -4.
0 V 80 mA 40 mA 10 mA 8.
0 Ω 12 Ω 18 Ω 85 pF 15 pF 15 pF ©2002 Fairchild Semiconductor Corporation Rev.
B, July 2002 J108/J109/J110/MMBFJ108 Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation De...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)