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MMBFJ110

ON Semiconductor
Part Number MMBFJ110
Manufacturer ON Semiconductor
Description N-Channel JFET
Published Jan 23, 2023
Detailed Description N-Channel JFET MMBFJ110 Features • This Device is Designed for Digital Switching Applications where Very Low On Resist...
Datasheet PDF File MMBFJ110 PDF File

MMBFJ110
MMBFJ110

Overview
N-Channel JFET MMBFJ110 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA TJ Junction Temperature 150 °C TJ, TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
These ratings are based on a maximum junction temperature of 150°C.
2.
These are steady−state limits.
ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (Note 3) Symbol Parameter Max Unit PD Total Device Dissipation Derate Above 25°C 460 mW 3.
68 mW/°C RqJA Thermal Resistance, Junction−to−Ambient 270 °C/W 3.
Device mounted on FR−4 PCB 36 mm x 18 mm x 1.
5 mm; mounting pad for the collector lead minimum 6 cm2.
www.
onsemi.
com 3 1 2 SOT−23/SUPERSOTt−23, 3 LEAD, 1.
4x2.
9 CASE 527AG 1.
Drain, 2.
Source, 3.
Gate MARKING DIAGRAM &Y 110 &G 110 = Specific Device Code &Y = Year Coding &G = Weekly Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2011 1 December, 2020 − Rev.
2 Publication Order Number: MMBFJ110/D MMBFJ110 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS IGSS Gate−Source Breakdown Voltage Gate Reverse Current VGS(off) Gate−Source Cut−Off Voltage ON CHARACTERISTICS IG = −10 mA, VDS = 0 VGS = −15 V, VDS = 0 VGS = −15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 n...


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