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6N60

INCHANGE
Part Number 6N60
Manufacturer INCHANGE
Description N-Channel Mosfet Transistor
Published Sep 1, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A...
Datasheet PDF File 6N60 PDF File

6N60
6N60

Overview
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 ℃/W 62.
5 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.
25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 3A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Forward On-Voltage IS= 6A; VGS= 0 MIN MAX UNIT 600 V 24V 1.
2 Ω ±100 nA 1 μA 1.
8 V · isc website：www.
iscsemi.
cn 2 ...


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