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6N60

Part Number	6N60
Manufacturer	ART CHIP
Description	N-CHANNEL MOSFET
Published	Sep 1, 2016
Detailed Description	6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designe...
Datasheet	6N60 PDF File

Overview

6N60 Power Mosfet 6.
2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES * RDS(ON) = 1.
5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL *Pb-free plating product number: 6N60L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 6N60-x-TA3-T 6N60L-x-TA3-T Package TO-220 Pin Assignment 12 GD 3 S Packing Tube www.
artschip.
com 1 6N60 Power Mosfet ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage 6N60-A 6N60-B VDSS 600 650 Gate-Source Voltage VGSS ±30 Avalanche Current (Note 1) Continuous Drain Current TC = 25°C IAR 6.
2 ID 6.
2 TC = 100°C 3.
9 Pulsed Drain Current (Note 1) Avalanche Energy Single Pulsed (Note 2) IDM EAS 24.
8 440 Repetitive (Note 1) EAR 13 Power Dissipation Junction Temperature PD 62.
5 TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC RATING 62 2 UNIT V V V A A A A mJ mJ W °C °C °C UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage 6N60-A BVDSS 6N60-B VGS = 0V, ID = 250µA Drain-Source Leakage Current Gate- Source Leakage Current Forw...

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