DatasheetsPDF.com

2N6660

Microchip
Part Number 2N6660
Manufacturer Microchip
Description N-Channel Enhancement-Mode Vertical DMOS FET
Published Sep 1, 2016
Detailed Description 2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requir...
Datasheet PDF File 2N6660 PDF File

2N6660
2N6660

Overview
2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
Description 2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.
This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where verylow threshold voltage, high breakdown voltage, highinput impedance, low-input capacitance, and fast switching speeds are desired.
Package Types GATE SOURCE DRAIN TO-39 Case: Drain See Table 2-1 for pin information  2016 Microchip Technology Inc.
DS20005509A-page 1 2N6660 1.
0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage .
.
BVDSS Drain-to-gate voltage.
BVDGS Gate-to-source voltage ±20V Operating and Storage Temperature .
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)