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2N6660

Seme LAB
Part Number 2N6660
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 1, 2016
Detailed Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshol...
Datasheet PDF File 2N6660 PDF File

2N6660
2N6660

Overview
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.
0A, RDS(ON) = 3.
0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±20V ID Continuous Drain Current TC = 25°C 1.
0A IDM Pulsed Drain Current (1) 3.
0A PD Total Power Dissipation at TC ≤ 25°C 5W De-rate TC > 25°C 40mW/°C PD Total Power Dissipation at TA ≤ 25°C 725mW De-rate TA > 25°C 5.
8mW/°C TJ Operating Temperature Range -65 to +150°C Tstg Storage Temperature Range -65 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Min.
Typ.
Max.
Units 25 °C...


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