DatasheetsPDF.com

MTB020N03KN6

Cystech Electonics
Part Number MTB020N03KN6
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C143N6 Issued Date : 2016.01.06 Revised Date : 2016.02.22 Page No. : 1/9 N-Chann...
Datasheet PDF File MTB020N03KN6 PDF File

MTB020N03KN6
MTB020N03KN6

Overview
CYStech Electronics Corp.
Spec.
No.
: C143N6 Issued Date : 2016.
01.
06 Revised Date : 2016.
02.
22 Page No.
: 1/9 N-Channel Enhancement Mode MOSFET MTB020N03KN6 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=7A RDS(ON)@VGS=4.
5V, ID=5A 30V 7A 8.
8A 14.
7 mΩ(typ) 18.
9 mΩ(typ) Description The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating package • ESD protected gate Equivalent Circuit MTB020N03KN6 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTB020N03KN6-0-T1-G SOT-26 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB020N03KN6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C143N6 Issued Date : 2016.
01.
06 Revised Date : 2016.
02.
22 Page No.
: 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage TC=25 °C Continuous Drain Current TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits 30 ±20 8.
8 7.
0 7 5.
6 40 3.
1 2 2 1.
25 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 1) Rth,j-c RθJA 40 62.
5 °C/W Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
156℃/W wh...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)