DatasheetsPDF.com

MTB020N03KQ8

Cystech Electonics
Part Number MTB020N03KQ8
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode MOSFET
Published Feb 9, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec. No. : C143Q8 Issued Date : 2015.11...
Datasheet PDF File MTB020N03KQ8 PDF File

MTB020N03KQ8
MTB020N03KQ8

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec.
No.
: C143Q8 Issued Date : 2015.
11.
13 Revised Date : Page No.
: 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package • ESD protected gate BVDSS ID RDS(ON)@VGS=10V, ID=9A RDS(ON)@VGS=4.
5V, ID=7A 30V 10.
2A 12.
8 mΩ(typ) 17.
4 mΩ(typ) Symbol MTB020N03KQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB020N03KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB020N03KQ8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C143Q8 Issued Date : 2015.
11.
13 Revised Date : Page No.
: 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.
1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH Total Power Dissipation TA=25 °C TA=100 °C Operating Junction and Storage Temperature Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits 30 ±20 10.
2 6.
5 40 *1 10 15 1.
5 *2 3.
1 1.
2 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Rth,j-c Rth,j-a 25 40 °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS VG...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)