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AOT7N65

Alpha & Omega Semiconductors
Part Number AOT7N65
Manufacturer Alpha & Omega Semiconductors
Description 7A N-Channel MOSFET
Published Sep 16, 2016
Detailed Description AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabri...
Datasheet PDF File AOT7N65 PDF File

AOT7N65
AOT7N65

Overview
AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 750V@150℃ 7A < 1.
56W D G D S G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N65 AOTF7N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.
4 4.
4* 24 3.
4 173 347 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.
5 1.
5 0.
3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT7N65 65 0.
5 AOTF7N65 65 -- Maximum Junction-to-Case RqJC 0.
65 3.
25 * Drain current limited by maximum junction temperature.
Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 3.
0: January 2021 www.
aosmd.
com Page 1 of 6 AOT7N65/AOTF7N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V VDS=520V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(t...


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