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AOT7N60

INCHANGE
Part Number AOT7N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 19, 2021
Detailed Description isc N-Channel MOSFET Transistor AOT7N60 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(M...
Datasheet PDF File AOT7N60 PDF File

AOT7N60
AOT7N60

Overview
isc N-Channel MOSFET Transistor AOT7N60 FEATURES ·Drain Current –ID= 7.
0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.
2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.
0 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 192 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
65 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise sp...


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