DatasheetsPDF.com

2SB1126

ON Semiconductor

PNP / NPN Epitaxial Planar Silicon Transistors

2SB1126 / 2SD1626 Ordering number : EN1721B 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Vario...


2SB1126

ON Semiconductor


Octopart Stock #: O-1053382

Findchips Stock #: 1053382-F

Web ViewView 2SB1126 Datasheet

File DownloadDownload 2SB1126 PDF File




Description
2SB1126 / 2SD1626 Ordering number : EN1721B 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • High DC current gain (4000 or greater). • Large current capacity. • Ultrasmall size making it easy to provide high-density, small-s
More View ized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Marking 2SB1126 : BI 2SD1626 : DI Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)8V, IC=0A min Ratings (--)80 (--)50 (--)10 (--)1.5 (--)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Ratings typ max Unit (--)100 nA (--)100 nA Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: 2SB1126_2SD1626/D Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 2SB1126 / 2SD1626 Symbol Conditions hFE1 hFE2 fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCE=(--)2V, IC=(--)500mA VCE=(--)2V, IC=(--)10mA VCE=(--)10V, IC=(--)50mA IC=(--)500mA, IB=(--)0.5mA IC=(--)500mA, IB=(--)0.5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A Package Dimensions unit : mm (typ) 7007B-004 min 4000 3000 (--)80 (--)50 (--)10 Ratings typ 120 (--)0.9 (--)1.5 max (--)1.5 (--)2.0 Unit MHz V V V V V Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 IC -- VCE --0.0-8-m0.A06mA --0.04mA --0.02mA 2SB1126 IC -- VCE 1.6 1.4 1.2 0.08mA 0.06mA 1.0 0.04mA 0.8 0.6 0.02mA 0.4 2SD1626 IB=0mA --2 --4 --6 --8 --10 --12 Collector-to-Emitter Voltage, VCE -- V ITR08937 0.2 0 IB=0mA 0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR08938 Rev.0 I Page 2 of 4 I www.onsemi.com 2SB1126 / 2SD1626 5 hFE -- IC 5 hFE -- IC 10 10 2SB1126 2SD1626 7 VCE= --2V 7 VCE=2V 55 33 22 DC Current Gain, hFE DC Current Gain, hFE 4 10 7 5 3 --0.01 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A ITR08939 VCE(sat) -- IC 2SB1126 IC / IB=1000 --10 7 5 3 2 4 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A ITR08940 VCE(sat) -- IC 3 2SD1626 2 IC / IB=1000 10 7 5 3 2 Collector-to-Emit






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)