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AP01L60H-H

Advanced Power Electronics
Part Number AP01L60H-H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2016
Detailed Description Advanced Power Electronics Corp. AP01L60H/J-H RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Av...
Datasheet PDF File AP01L60H-H PDF File

AP01L60H-H
AP01L60H-H

Overview
Advanced Power Electronics Corp.
AP01L60H/J-H RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement D G S Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01L60J) is available for low-profile applications.
BVDSS RDS(ON) ID 700V 12Ω 1A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range G DS TO-251(J) Rating 700 +30 1 0.
8 3 29 0.
232 0.
5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4.
3 62.
5 110 Units ℃/W ℃/W ℃/W Data & specifications subject to change without notice 1 201305283 AP01L60H/J-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=0.
4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=0.
5A Drain-Source Leakage Current VDS=600V, VGS=0V Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V Gate-Source Leakage Total Gate Charge3 VGS=+30V, VDS=0V ID=1A Gate-Source Charge VDS=480V Gate-Drain ("Miller") Charge Turn-on Delay Time3 VGS=...


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