DatasheetsPDF.com

SSPL2015

Silikron Semiconductor
Part Number SSPL2015
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 21, 2016
Detailed Description Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits:  Advanced Process Te...
Datasheet PDF File SSPL2015 PDF File

SSPL2015
SSPL2015

Overview
Main Product Characteristics: VDSS 200V RDS(on) 0.
13ohm(typ.
) ID 18A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL2015 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=4.
2mH Avalanche Current @ L=4.
2mH Operating Junction and Storage Temperature Range Max.
18 ① 13 ① 72 150 1.
0 200 ± 30 412 14 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.
,LTD.
2012.
09.
04 www.
silikron.
com Version : 1.
1 page 1 of 8 SSPL2015 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
1.
0 62 40 Units °C/W °C/W °C/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)