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SSPL2015D

Silikron Semiconductor
Part Number SSPL2015D
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 21, 2016
Detailed Description Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-252  Advanced Proces...
Datasheet PDF File SSPL2015D PDF File

SSPL2015D
SSPL2015D

Overview
Main Product Characteristics VDSS RDS(on) 200V 0.
13Ω(typ.
) ID 18A ① Features and Benefits TO-252  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery SSPL2015D Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Lin...


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