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SSPL6005

Silikron Semiconductor
Part Number SSPL6005
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 21, 2016
Detailed Description Main Product Characteristics: VDSS 60V RDS(on) 4.9mohm(typ.) ID 160A ① Features and Benefits: TO220  Advanced Pr...
Datasheet PDF File SSPL6005 PDF File

SSPL6005
SSPL6005

Overview
Main Product Characteristics: VDSS 60V RDS(on) 4.
9mohm(typ.
) ID 160A ① Features and Benefits: TO220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL6005 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain...


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