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SSPL6040

Silikron Semiconductor
Part Number SSPL6040
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 22, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) 60V 34mΩ (typ.) ID 38A TO-220 Features and Benefits:  Advanced Process...
Datasheet PDF File SSPL6040 PDF File

SSPL6040
SSPL6040

Overview
Main Product Characteristics: VDSS RDS(on) 60V 34mΩ (typ.
) ID 38A TO-220 Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL6040 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.
67mH Avalanche Current @ L=0.
67mH Operating Junction and Storage Temperature Range Max.
38 27 152 71 0.
48 60 ±20 127 19.
5 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.
,LTD.
2012.
06.
05 www.
silikron.
com Version : 1.
0 page 1 of 8 SSPL6040 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ.
— — Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse...


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