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SSS1206

GOOD-ARK
Part Number SSS1206
Manufacturer GOOD-ARK
Description N-Channel MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics VDSS 120V RDS(on) 4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Proces...
Datasheet PDF File SSS1206 PDF File

SSS1206
SSS1206

Overview
Main Product Characteristics VDSS 120V RDS(on) 4mΩ (typ.
) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSS1206 120V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.
3mH Avalanche Current @ L=0.
3mH Operating Junction and Storage Temperature Range Max.
180 ① 130 ① 670 375 2.
5 120 ± 20 1045 83.
5 -55 to +175 Units A W W/°C V V mJ A °C www.
goodark.
com Page 1 of 7 Rev.
1.
0 SSS1206 120V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
0.
4 62 40 Units °C/W °C/W °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance...


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