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SSS1206H

Silikron Semiconductor
Part Number SSS1206H
Manufacturer Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Published Sep 22, 2016
Detailed Description                                  Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and...
Datasheet PDF File SSS1206H PDF File

SSS1206H
SSS1206H

Overview
                                 Main Product Characteristics VDSS 120V RDS(on) 4.
7mΩ (typ.
) ID 180A ① Features and Benefits TO-247  „ Advanced Process Technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSS1206H  Marking and pin Assignment      Schematic diagram    Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switc...


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