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SSF3610E

GOOD-ARK
Part Number SSF3610E
Manufacturer GOOD-ARK
Description N-Channel MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics VDSS 25 V RDS(on) 6.8 mΩ(typ.) ID 18A SOP-8 Features and Benefits  Advanced MOSFET p...
Datasheet PDF File SSF3610E PDF File

SSF3610E
SSF3610E

Overview
Main Product Characteristics VDSS 25 V RDS(on) 6.
8 mΩ(typ.
) ID 18A SOP-8 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3610E 25V N-Chanel MOSFET SSF3610E Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Thermal Resistance Max.
18 72 3.
1 25 ± 12 -55 to +150 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Typ.
— Max.
40 Units A W V V °C Units ℃/W www.
goodark.
com Page 1 of 6 Rev.
2.
1 SSF3610E 25V N-Chanel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
25 — — — 1 — — — — — — — — — — — — — Typ.
— 6.
8 7.
6 10.
4 1.
3 — — — 15.
4 3.
6 5.
8 6.
6 4.
6 33.
0 20.
3 1260 353 295 Max.
— 10 12 14 2.
5 1 10 -10 — — — — — — — — — — Units V mΩ V μA μA nC ns pF Conditions VGS = 0V, ID ...


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