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SSF3610

GOOD-ARK
Part Number SSF3610
Manufacturer GOOD-ARK
Description 30V N-Channel MOSFET
Published Jan 18, 2016
Detailed Description DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
Datasheet PDF File SSF3610 PDF File

SSF3610
SSF3610

Overview
DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 13mΩ @ VGS=4.
5V RDS(ON) < 9mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3610 30V N-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3610 SSF3610 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit 30 ±20 11 8.
6 50 2 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.
5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit 30 V www.
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0 SSF3610 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IG SS VGS(th) RDS(O N) gFS Clss Coss Crss td(on) tr td(o...


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