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UT54ACTS00

Aeroflex Circuit Technology
Part Number UT54ACTS00
Manufacturer Aeroflex Circuit Technology
Description Quadruple 2-Input NAND Gates
Published Sep 24, 2016
Detailed Description Standard Products UT54ACS00/UT54ACTS00 Quadruple 2-Input NAND Gates Datasheet November, 2010 www.aeroflex.com/logic FEA...
Datasheet PDF File UT54ACTS00 PDF File

UT54ACTS00
UT54ACTS00

Overview
Standard Products UT54ACS00/UT54ACTS00 Quadruple 2-Input NAND Gates Datasheet November, 2010 www.
aeroflex.
com/logic FEATURES ‰ 1.
2μ CMOS - Latchup immune ‰ High speed ‰ Low power consumption ‰ Single 5 volt supply ‰ Available QML Q or V processes ‰ Flexible package - 14-pin DIP - 14-lead flatpack ‰ UT54ACS00 - SMD 5962-96512 ‰ UT54ACTS00 - SMD 5962-96513 DESCRIPTION The UT54ACS00 and the UT54ACTS00 are quadruple, twoinput NAND gates.
The circuits perform the Boolean functions Y = A⋅B or Y = A + B in positive logic.
The devices are characterized over full military temperature range of -55°C to +125°C.
FUNCTION TABLE INPUTS AB HH LX XL OUTPUT Y L H H LOGIC SYMBOL (1) A1 (2) B1 (4) A2 (5) B2 (9) A3 (10) B3 (12) A4 (13) B4 & (3) Y1 (6) Y2 (8) Y3 (11) Y4 Note: 1.
Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC Publication 617-12.
PINOUTS 14-Pin DIP Top View A1 1 14 VDD B1 2 13 B4 Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 Y2 6 9 A3 VSS 7 8 Y3 14-Lead Flatpack Top View A1 1 14 B1 2 13 Y1 3 12 A2 4 11 B2 5 10 Y2 6 9 VSS 7 8 LOGIC DIAGRAM A1 B1 A2 B2 A3 B3 A4 B4 Y1 Y2 Y3 Y4 1 VDD B4 A4 Y4 B3 A3 Y3 OPERATIONAL ENVIRONMENT1 PARAMETER Total Dose SEU Threshold 2 SEL Threshold Neutron Fluence LIMIT 1.
0E6 80 120 1.
0E14 UNITS rads(Si) MeV-cm2/mg MeV-cm2/mg n/cm2 Notes: 1.
Logic will not latchup during radiation exposure within the limits defined in the table.
2.
Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.
3 to 7.
0 V VI/O TSTG TJ TLS ΘJC II Voltage any pin Storage Temperature range Maximum junction temperature Lead temperature (soldering 5 seconds) Thermal resistance junction to case DC input current -.
3 to VDD +.
3 -65 to +150 +175 +300 20 ±10 V °C °C °C °C/W mA PD Maximum power dissipation 1W Note: 1.
Stresses outside the listed absolute maximum ratings may cause permanent damage to the device.
This is a stress rating only, functional operation o...


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