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UT54ACTS00

ETC
Part Number UT54ACTS00
Manufacturer ETC
Description Quadruple 2-Input NAND Gates
Published Nov 18, 2008
Detailed Description UT54ACS00/UT54ACTS00 Radiation-Hardened Quadruple 2-Input NAND Gates FEATURES • 1.2µ radiation-hardened CMOS - Latchup ...
Datasheet PDF File UT54ACTS00 PDF File

UT54ACTS00
UT54ACTS00

Overview
UT54ACS00/UT54ACTS00 Radiation-Hardened Quadruple 2-Input NAND Gates FEATURES • 1.
2µ radiation-hardened CMOS - Latchup immune • High speed • Low power consumption www.
DataSheet4U.
com • Single 5 volt supply • Available QML Q or V processes • Flexible package - 14-pin DIP - 14-lead flatpack DESCRIPTION The UT54ACS00 and the UT54ACTS00 are quadruple, twoinput NAND gates.
The circuits perform the Boolean functions Y = A⋅B or Y = A + B in positive logic.
The devices are characterized over full military temperature range of -55°C to +125°C.
FUNCTION TABLE INPUTS A H L X B H X L OUTPUT Y L H H PINOUTS 14-Pin DIP Top View A1 B1 Y1 A2 B2 Y2 VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD B4 A4 Y4 B3 A3 Y3 14-Lead Flatpack Top View A1 B1 Y1 A2 B2 Y2 VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD B4 A4 Y4 B3 A3 Y3 LOGIC DIAGRAM LOGIC SYMBOL (1) (2) (4) (5) (9) (10) (12) (13) (11) (6) (8) Y2 Y3 Y4 A1 B1 A2 & (3) Y1 B2 A3 B3 A4 B4 Y4 Y3 Y1 A1 B1 A2 B2 A3 B3 A4 B4 Y2 Note: 1.
Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC Publication 617-12.
1 RadHard MSI Logic UT54ACS00/UT54ACTS00 RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER Total Dose SEU Threshold 2 SEL Threshold Neutron Fluence LIMIT 1.
0E6 80 120 1.
0E14 UNITS rads(Si) MeV-cm2/mg MeV-cm2/mg n/cm2 Notes: 1.
Logic will not latchup during radiation exposure within the limits defined in the table.
2.
Device storage elements are immune to SEU affects.
www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS PARAMETER Supply voltage Voltage any pin Storage Temperature range Maximum junction temperature Lead temperature (soldering 5 seconds) Thermal resistance junction to case DC input current Maximum power dissipation LIMIT -0.
3 to 7.
0 -.
3 to V DD +.
3 -65 to +150 +175 +300 20 ±10 1 UNITS V V °C °C °C °C/W mA W SYMBOL VDD VI/O TSTG TJ TLS ΘJC II PD Note: 1.
Stresses outside the listed absolute maximum ratings may cause permanent damage to the device.
This is a stress rating only, functional operation of the device at these ...


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