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ICE17N60

Micross Components
Part Number ICE17N60
Manufacturer Micross Components
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description ICE17N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High...
Datasheet PDF File ICE17N60 PDF File

ICE17N60
ICE17N60

Overview
ICE17N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 17A 600V 0.
19Ω 59nC Pin Description: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 17 51 460 8.
5 50 ±20 ±30 186 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 8.
5A Limited by Tjmax VDS = 480V, ID = 17A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3...


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