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ICE17N60

Part Number	ICE17N60
Manufacturer	Icemos
Description	N-Channel Enhancement Mode MOSFET
Published	Oct 8, 2013
Detailed Description	Preliminary Data Sheet ICE17N60 ICE17N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Char...
Datasheet	ICE17N60 PDF File

Overview

Preliminary Data Sheet ICE17N60 ICE17N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 17A 600V 0.
19Ω 59nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN...

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