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STP3467

Stanson Technology
Part Number STP3467
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field e...
Datasheet PDF File STP3467 PDF File

STP3467
STP3467

Overview
STP3467 P Channel Enhancement Mode MOSFET -5.
2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P D SD FEATURE ◆ -20V/-5.
0A, RDS(ON)=90mohm@VGS=-4.
5V ◆ -20V/-3.
5A, RDS(ON)=110mohm@VGS=-2.
5V ◆ -20V/-1.
7A, RDS(ON)=140mohm@VGS=-1.
8V 67YW D DG Y: Year A: Week Code ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design ORDERING INFORMATION Part Number Package Part Marking STP3467ST6RG TSOP-6 67YW ※ Week Code Code : A ~ Z ; a ~ z ※ STP3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STP3467 2008.
V1 STP3467 P Channel Enhancement Mode MOSFET -5.
2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM -5.
2 -4.
2 -20 A A Continuous Source Current (Diode Conduction) IS -1.
7 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 2.
0 1.
3 -55/150 W ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STP3467 2008.
V1 STP3467 P Channel Enhancement Mode MOSFET -5.
2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Vo...


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