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STP3481

Stanson Technology
Part Number STP3481
Manufacturer Stanson Technology
Description P Channel Enhancement Mode MOSFET
Published Oct 14, 2009
Detailed Description P Channel Enhancement Mode MOSFET STP3481 -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power ...
Datasheet PDF File STP3481 PDF File

STP3481
STP3481

Overview
P Channel Enhancement Mode MOSFET STP3481 -5.
2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P FEATURE z z z z z -30V/-5.
2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.
2A, RDS(ON) = 75m-ohm @VGS = -4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design 1.
2.
5.
6.
Drain PART MARKING TSOP-6P www.
DataSheet4U.
com 3.
Gate 4.
Source Y: Year Code A: Process Code ORDERING INFORMATION Part Number STP3481S6RG ※ Process Code : A ~ Z ; a ~ z 1 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com STP3481 2006.
V1 Package TSOP-6P Part Marking 81YA P Channel Enhancement Mode MOSFET STP3481 -5.
2A ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal www.
DataSheet4U.
com Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -5.
2 -4.
2 -20 -1.
7 2.
0 1.
3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com STP3481 2006.
V1 P Channel Enhancement Mode MOSFET STP3481 -5.
2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Ga...


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