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STN4828

Stanson Technology
Part Number STN4828
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement ...
Datasheet PDF File STN4828 PDF File

STN4828
STN4828

Overview
STN4828 Dual N Channel Enhancement Mode MOSFET 10.
0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION SOP-8 FEATURE 60V/10.
0A, RDS(ON) = 30mΩ (Typ.
) @VGS = 10V 60V/6.
0A, RDS(ON) = 35mΩ @VGS = 4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design MARKING Y: Year Code A: Porduce Code P: Process Code 1 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4828 2008.
V1 STN4828 Dual N Channel Enhancement Mode MOSFET 10.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwi...


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