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STN4826

Stanson
Part Number STN4826
Manufacturer Stanson
Description Dual N-Channel Enhancement Mode MOSFET
Published May 9, 2015
Detailed Description STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement m...
Datasheet PDF File STN4826 PDF File

STN4826
STN4826

Overview
STN4826 Dual N Channel Enhancement Mode MOSFET 8.
0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION SOP-8 FEATURE 60V/ 8.
0A, RDS(ON) = 30mΩ (Typ.
) @VGS = 10V 60V/6.
0A, RDS(ON) = 40mΩ @VGS = 4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design MARKING Y: Year Code A: Porduce Code B: Process Code 1 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4826 2013.
V1 STN4826 Dual N Channel Enhancement Mode MOSFET 8.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise...


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