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MDP9N60

MagnaChip
Part Number MDP9N60
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Sep 28, 2016
Detailed Description MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDP9N60 uses advanced M...
Datasheet PDF File MDP9N60 PDF File

MDP9N60
MDP9N60

Overview
MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.
75Ω General Description The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features  VDS = 600V  VDS = 660V  ID =9.
0A  RDS(ON) ≤ 0.
75Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 600 660 ±30 9.
0 5.
7 36 150 1.
2 15 4.
5 480 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec.
2014 Version 2.
2 1 Symbol RθJA RθJC Rating 62.
5 0.
83 Unit oC/W MagnaChip Semiconductor Ltd.
MDP9N60 N-channel MOSFET 600V Ordering Information Part Number MDP9N60TH Temp.
Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall ...


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