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CY62167G

Cypress
Part Number CY62167G
Manufacturer Cypress
Description 16-Mbit (1M Words x 16 Bit) Static RAM
Published Oct 2, 2016
Detailed Description CY62167G/CY62167GE MoBL 16-Mbit (1M words × 16-bit/ 2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) 16-Mb...
Datasheet PDF File CY62167G PDF File

CY62167G
CY62167G


Overview
CY62167G/CY62167GE MoBL 16-Mbit (1M words × 16-bit/ 2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1M words × 16-bit/2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby current ❐ Typical standby current: 5.
5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.
65 V to 2.
2 V, 2.
2 V to 3.
6 V, and 4.
5 V to 5.
5 V ■ 1.
0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ 48-pin TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional Description CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1].
Both devices are offered in single and dual chip enable options and in multiple pin configurations.
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