DatasheetsPDF.com

AP2313GN Datasheet PDF


Part Number AP2313GN
Manufacturer Advanced Power Electronics
Title P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BVD...
Features A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 150 Unit ℃/W 1 201411175AP AP2313GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions...

File Size 59.24KB
Datasheet AP2313GN PDF File








Similar Ai Datasheet

AP2310AGN-HF : AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pu.

AP2310GG-HF : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SOT-89 D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 Rating 60 +20 2.7 2.2 10 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Unit ℃/W Data and .

AP2310GG-HF-3 : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2310GG-HF-3 is in the popular SOT-89 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D G D S SOT-89 (G) Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±20 2.7 2.2 10 1.25 -55 to 150 -.

AP2310GK-HF : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. G 60V 90mΩ 4.1A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 +20 4.1 3.2 10 2.78 -55 to 150 -55 to 150 V V.

AP2310GN : SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 60 ±20 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 3 2.3 10 1.38 0.01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junct.

AP2310GN-HF : AP2310 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G 60V 90mΩ 3A D S Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source .

AP2310GN-HF-3 : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2310GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±20 3 2.3 10 1.38 -55 to 150 -55 to 150 .

AP2311 : The AP2301 and AP2311 are single channel current-limited integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB standards and is available with both polarities of Enable input. The devices have fast short-circuit response time for improved overall system robustness, and have integrated output discharge function to ensure completely controlled discharging of the output voltage capacitor. They provide a complete protection solution for applications subject to heavy capacitive loads and the prospect of short circuit, and offer reverse current blocking, over-current, over-temperature and short-circuit .

AP2311A : The AP2301A and AP2311A are single channel, current-limited, integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB standards and is available with both polarities of Enable input. The devices have fast short-circuit response time for improved overall system robustness, and have integrated output discharge function to ensure completely controlled discharging of the output voltage capacitor. They provide a complete protection solution for applications subject to heavy capacitive loads and the prospect of short circuit, and offer reverse current blocking, over-current, over-temperature and short-circ.

AP2311GK-HF : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID G -60V 250mΩ - 2.4A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range - 60 +20 - 2.4 -2 -10 2.78 -55 to 150 -55 to 150 V V A A A W.

AP2311GK-HF-3 : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2311GK-HF-3 is in the popular SOT-223 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D S D SOT-223 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -60 ± 20 -2.4 -2 -10 2.78 -55 to 150 -55.

AP2311GN : The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 60 ±20 - 1.8 - 1.4 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range.

AP2311GN-HF : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID G -60V 250mΩ - 1.8A D S Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor - 60 +20 - 1.8 - 1.4 -10 1.38 0.01 V V A A A W W/℃ .

AP2312GN : SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 20 ±12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 4.3 3.4 10 1.38 0.01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Jun.

AP2312GN-HF-3 : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2312GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 + 12 4.3 3.4 10 1.38 -55 to 150 -55 to 15.

AP2313GN-HF : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +12 -2.5 -1.97 -10 0.83 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Sy.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)