DatasheetsPDF.com

AP60N03GP-HF

Advanced Power Electronics
Part Number AP60N03GP-HF
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP60N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-...
Datasheet PDF File AP60N03GP-HF PDF File

AP60N03GP-HF
AP60N03GP-HF

Overview
Advanced Power Electronics Corp.
AP60N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free D S BVDSS RDS(ON) ID 30V 13.
5mΩ 55A Description AP60N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an G D S TO-263(S) extreme efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
The through-hole version (AP60N03P) are available for low-profile applications.
G DS TO-220(P) Absolute Maximum Ratings@Tj=25oC.
(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 +20 55 35 215 62.
5 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 2 40 62 Unit ℃/W ℃/W ℃/W Data & specifications subject to change without notice 1 201409031 AP60N03GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Forward Leakage Total Gate Charge...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)