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AP60N03GP-HF-3

Advanced Power Electronics
Part Number AP60N03GP-HF-3
Manufacturer Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Published Jul 21, 2014
Detailed Description Advanced Power Electronics Corp. AP60N03GP/S-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low...
Datasheet PDF File AP60N03GP-HF-3 PDF File

AP60N03GP-HF-3
AP60N03GP-HF-3

Overview
Advanced Power Electronics Corp.
AP60N03GP/S-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 30V 13.
5mΩ 55A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP60N03GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
The AP60N03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.
G D S D (tab) TO-263 (S) D (tab) G D Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 S TO-220 (P) Rating 30 ±20 55 35 215 62.
5 0.
5 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
0 62 Units °C/W °C/W Ordering Information AP60N03GS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel) AP60N03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200412211-3 1/6 Advanced Power Electronics Corp.
AP60N03GP/S-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
037 11.
5 18 30 22.
4 2.
7 14 7.
4 81 24 18 950 440 145 Max.
Units 13.
5 20 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF ...


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