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AP60N2R5H

Advanced Power Electronics
Part Number AP60N2R5H
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP60N2R5H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switchi...
Datasheet PDF File AP60N2R5H PDF File

AP60N2R5H
AP60N2R5H

Overview
Advanced Power Electronics Corp.
AP60N2R5H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
VDS @ Tj,max.
RDS(ON) ID 650V 2.
5Ω 3.
5A G D S TO-252(H) Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 3.
5 A ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 2.
2 A 14 A PD@TC=25℃ Total Power Dissipation 56.
8 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy4 2W 8 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 2.
2 62.
5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201412251 AP60N2R5H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Ciss Input Capacitance Coss O...


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