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AP60N2R5I

Advanced Power Electronics
Part Number AP60N2R5I
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP60N2R5I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switchi...
Datasheet PDF File AP60N2R5I PDF File

AP60N2R5I
AP60N2R5I

Overview
Advanced Power Electronics Corp.
AP60N2R5I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications.
The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON) ID3 650V 2.
5Ω 3.
5A G DS TO-220CFM(I) .
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 V 3.
5 A 2.
2 A 14 A PD@TC=25℃ Total Power Dissipation 26 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy4 1.
92 W 8 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 4.
8 65 Units ℃/W ℃/W 1 201411261 AP60N2R5I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS=0V, ID=250uA VGS=10V, ID=1.
4A VDS=VGS, ID=250uA 600 - -V - - 2.
5 Ω 2 - 5V gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gat...


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