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AM6923P

Analog Power
Part Number AM6923P
Manufacturer Analog Power
Description Dual P-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power AM6923P Dual P-Channel 12-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell densi...
Datasheet PDF File AM6923P PDF File

AM6923P
AM6923P


Overview
Analog Power AM6923P Dual P-Channel 12-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCTSUMMARY VDS (V) rDS(on) (OHM) 0.
022 @VGS= -4.
5V -12 0.
027 @VGS= -2.
5V 0.
032 @VGS= -1.
8V ID (A) -5.
7 -4.
9 -4.
0 • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TSSOP-8 saves board space • Fast switching speed • High performance trench technology TSSOP-8 Top View S1 S2 D1 1 S1 2 8 D2 7 S2 G1 G2 S1 3 6 S2 G1 4 5 G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESSOTHERWISENOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -12 V ±8 -5.
7 -4.
7 A -10 Continuous Source Current (Diode Conduction)a IS ±1.
6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.
15 0.
7 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RthJA Typ 93 130 Max 110 150 oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM6923_C Analog Power AM6923P SPECIFICATIONS (TA = 25oCUNLESS OTHERWISENOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Ri...



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