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GS832132E

GSI Technology
Part Number GS832132E
Manufacturer GSI Technology
Description 36Mb Sync Burst SRAMs
Published Oct 14, 2016
Detailed Description GS832118/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb...
Datasheet PDF File GS832132E PDF File

GS832132E
GS832132E

Overview
GS832118/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 2.
5 V or 3.
3 V VDD 2.
5 V or 3.
3 V I/O Features • IEEE 1149.
1 JTAG-compatible Boundary Scan • 2.
5 V or 3.
3 V +10%/–10% core power supply • 2.
5 V or 3.
3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • Pb-Free 165-bump BGA package available Functional Description Applications The GS832118/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging ...


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