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GS832132E-V

GSI Technology
Part Number GS832132E-V
Manufacturer GSI Technology
Description 36Mb Sync Burst SRAMs
Published Oct 14, 2016
Detailed Description GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V V...
Datasheet PDF File GS832132E-V PDF File

GS832132E-V
GS832132E-V

Overview
GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.
8 V or 2.
5 V VDD 1.
8 V or 2.
5 V I/O Features • IEEE 1149.
1 JTAG-compatible Boundary Scan • 1.
8 V or 2.
5 V core power supply • 1.
8 V or 2.
5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available Functional Description Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
C...


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