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FDD6N50TM_F085

Fairchild Semiconductor
Part Number FDD6N50TM_F085
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Oct 16, 2016
Detailed Description FDD6N50TM_F085 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10...
Datasheet PDF File FDD6N50TM_F085 PDF File

FDD6N50TM_F085
FDD6N50TM_F085

Overview
FDD6N50TM_F085 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.
9Ω @VGS = 10 V • Low gate charge ( typical 12.
8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant November 2010 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high...


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