DatasheetsPDF.com

2N6667

Part Number	2N6667
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 17, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6667 DESCRIPTION ·High ...
Datasheet	2N6667 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6667 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
0V(Max)@ IC= -5A ·Complement to Type 2N6387 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -250 65 2 150 mA W ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
92 ℃/W Rth j-a T...

Similar Datasheet

2N6603 HIGH FREQUENCY TRANSISTOR - Motorola
2N6604 HIGH FREQUENCY TRANSISTOR - Motorola
2N6609 COMPLEMENTARY POWER TRANSISTORS - ON Semiconductor
2N6609 COMPLEMENTARY SILICON POWER TRANSITORS - Central Semiconductor
2N6609 Silicon PNP Transistor - NTE
2N6609 Silicon PNP Power Transistor - Inchange Semiconductor
2N6620 NPN SILICON TRANSISTOR - Siemens
2N6648 (2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR - Microsemi Corporation
2N6648 PNP Transistor - INCHANGE
2N6648 Darlington Power Transistor - TAITRON

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)